| PART |
Description |
Maker |
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S |
45ns 1M x 16bit CMOS dynamic ram with EDO page mode
50ns 1M x 16bit CMOS dynamic ram with EDO page mode
60ns 1M x 16bit CMOS dynamic ram with EDO page mode
|
AMIC Technology
|
| MB814265-70 MB814265-60 |
CMOS 256K ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM)
CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超级页面存取模式动态RAM) 的CMOS 256K × 16位的超页模式动态RAM的CMOS56K × 16位超级页面存取模式动态内存）
CMOS 256K ?16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ?16 浣??绾ч〉?㈠???ā寮????AM)
|
Fujitsu Limited
Fujitsu, Ltd.
|
| MB85343C-70 |
CMOS 1M×32 BIT
Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块)
CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) 的CMOS 100万32位的超页模式内存的CMOS00万32位超级页面存取模式动态内存模块）
|
Fujitsu Limited
Fujitsu, Ltd.
|
| V53C8125H V53C8125H30 V53C8125H35 V53C8125H40 V53C |
Ultra-high performance 128K x 8bit fast page mode CMOS dynamic RAM
ULTRA-HIGH PERFORMANCE, 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高性能28K的乘八快速页面模式的CMOS动态随机存储器
OSC 3.3V SMT 7X5 CMOS 超高性能28K的乘八快速页面模式的CMOS动态随机存储器
ULTRA-HIGH PERFORMANCE/ 128K X 8 FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
Mosel Vitelic Corp
|
| K4F160411D K4F160412D K4F170411D K4F170412D K4F160 |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MB81116422A-84 MB81116422A-125 |
CMOS 2×2M ×4 BIT
Hyper Page Mode Dynamic RAM(CMOS 2×2M ×4 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| KM41C4000DLJ-6 KM41V4000DLJ-6 KM41V4000DLJ-7 KM41C |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 70ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns
|
Samsung Electronic
|
| K4F151611 K4F151611D K4F151612D K4F171611D K4F1716 |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4F160411C-B K4F170411C K4F170411C-B K4F170411C-F |
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns
4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns
|
Samsung Electronic
Samsung semiconductor
|
| K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
